GaAs Infrared and Photo-Transistor 80Vceo 7Vebo DIP-6 The TLP635 consists of a photo-transistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a six lead plastic DIP package. Specifications LED Forward Voltage: 1.15V @ 10 mA LED Capacitance: 30 pF Detector Collector-Emitter Voltage: 80V Detector Collector Current: 50 mA Detector Power Dissipation: 150 mW Package: DIP-6