IC DRAM 16kx4 SMOS 120ns DIP-18 This is a Military high-speed, 65,536-bit dynamic random-access memory (DRAM) organized as 16,384 words of 4 bits each. I employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for very high performance combined with low cost and improved reliability. Features 16,384 x 4 organization; Single 5V supply (A 10% tolerance); Access time for address: 120 ns (max.); Access time column address: 70 ns (max.); Read or write cycle: 230 ns (min.); Read-modify-write cycle: 320 ns (min.); 3-State unlatched outputs;
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