IC MM2102AN-4 NMOS SRAM 1024-Bit (1024x1) 250ns DIP-16

Memory 1024-Bit NMOS Static RAM DIP-16 This static random access read/write memory is manufactured using N-channel depletion-mode silicon gate technology. Static storage cells eliminate the need for clocks or refresh circuitry and the resultant cost associated with them. Features Single 5V supply All inputs and outputs directly DTL/TTL compatible Static operation - no clocks or refresh TRI-STATE output for bus interface All inputs protected against static charge Access time down to 250 ns