Parallel EEPROM This is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The CMOS technology offers fast access times of 120ns at low power dissipation. When the chip is deselected the standby current is less than 100 AmicroA.Features Fast Read Access Time: 150 ns Fast Byte Write: 200 Amicros or 1 ms Self-timed Byte Write Cycle Low Power, High Reliability Supply Voltage: 5V A 10% CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout DIP-28 configuration (28 pins)
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